Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
- 14 March 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (12) , 1570-1572
- https://doi.org/10.1063/1.126098
Abstract
Self-assembled InGaN islands were grown by molecular-beam epitaxy on GaN, following a Stranski–Krastanow growth mode. Atomic force microscopy revealed that their dimensions were small enough to expect zero-dimensional quantum effects: the islands were typically 27 nm wide and 2.9 nm high. Strong blue-violet photoluminescence of the dots is observed, persisting up to room temperature. The temperature dependence of the photoluminescence is analyzed and compared to that of InGaN quantum well and bulk samples.Keywords
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