Size-dependent electrical behavior of spatially inhomogeneous barrier height regions on silicon
- 23 October 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (17) , 2698-2700
- https://doi.org/10.1063/1.1319534
Abstract
A series of ordered, periodic arrays of low barrier height n-Si/Ni nanometer-scale contacts interspersed among high barrier height n-Si/liquid contacts were prepared by evaporating Ni through bilayers of close-packed latex spheres deposited on n-Si. By varying the diameter of the spheres from 174 to 1530 nm, geometrically self-similar Si/Ni structures were produced having triangular Si/Ni features ranging from approximately 100 to 800 nm on a side. The resulting Si surfaces were used as electrodes in methanolic electrochemical cells containing LiClO4 and 1,1′-dimethylferrocene+/o. The dark current density–voltage properties of the resulting mixed barrier height contacts were strongly dependent on the size of the low barrier height contact regions even though the fraction of the Si surface covered by Ni remained constant.Keywords
This publication has 23 references indexed in Scilit:
- Numerical study of electrical transport in inhomogeneous Schottky diodesJournal of Applied Physics, 1999
- The origin of the integral barrier height in inhomogeneous Au/Co/GaAs67P33-Schottky contacts: A ballistic electron emission microscopy studyJournal of Applied Physics, 1998
- Electron transport at Au/InP interface with nanoscopic exclusionsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Electron transport at metal-semiconductor interfaces: General theoryPhysical Review B, 1992
- Ballistic electron emission microscopy study of PtSi–n-Si(100) Schottky diodesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Electron transport of inhomogeneous Schottky barriers: A numerical studyJournal of Applied Physics, 1991
- Electron transport of inhomogeneous Schottky barriersApplied Physics Letters, 1991
- Size effect of parallel silicide contactPhysical Review B, 1987
- Characteristics of Schottky diodes with microcluster interfaceApplied Physics Letters, 1983
- Size dependence of ’’effective’’ barrier heights of mixed-phase contactsJournal of Vacuum Science and Technology, 1982