Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process
- 21 July 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (3) , 353-355
- https://doi.org/10.1063/1.119535
Abstract
We fabricated a Si single electron tunneling transistor which has a nanoscale floating dot gate stacked on a Coulomb island by a self-aligned process. This device exhibits drain current (Id) oscillations due to the Coulomb blockade effect and quantized threshold voltage (Vth) shifts resulting from a single electron tunneling from the channel to the floating dot gate. The high on/off current ratio of the Id oscillation combined with the quantized Vth shifts leads to the possibility of developing ultralow power consumption memory.Keywords
This publication has 6 references indexed in Scilit:
- Room temperature operation of Si single-electron memory with self-aligned floating dot gateApplied Physics Letters, 1997
- Microstructure and optical absorption properties of Si nanocrystals fabricated with low-pressure chemical-vapor depositionJournal of Applied Physics, 1996
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 KApplied Physics Letters, 1995
- Isolated Nanometer-Size Si Dot Arrays Fabricated Using Electron-Beam Lithography, Reactive Ion Etching, and Wet Etching in NH4OH/H2O2/H2OJapanese Journal of Applied Physics, 1994
- Room-temperature single-electron memoryIEEE Transactions on Electron Devices, 1994