A systematic RHEED study of regular and random steps on GaAs(001) surfaces
- 1 March 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 264 (1-2) , 10-22
- https://doi.org/10.1016/0039-6028(92)90160-8
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Influence of surface disorder on RHEED patterns from GaAs(001)−2 × 4 surfacesSurface Science, 1990
- In situmonitoring of step arrays on vicinal silicon (100) surfaces for heteroepitaxyPhysical Review B, 1990
- On the RHEED specular beam and its intensity oscillation during MBE growth of GaAsSurface Science, 1990
- Characteristic features in RHEED patterns of disordered surfaces: Theoretical considerationsSurface Science, 1989
- A reflection high-energy electron diffraction study of (100) GaAs vicinal surfacesJournal of Vacuum Science & Technology B, 1989
- The meandering of steps on GaAs(100)Journal of Crystal Growth, 1989
- Effects of diffraction conditions and processes on rheed intensity oscillations during the MBE growth of GaAsApplied Physics A, 1987
- Quantitative analysis of streaks in reflection high-energy electron diffraction: GaAs and AlAs deposited on GaAs(001)Physical Review B, 1986
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Theory of rheed for general surfacesSurface Science, 1979