In-Depth Profile of Electrical Property of InAs Epitaxial Layer Grown on Semi-Insulating GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition
- 1 March 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (3B) , L368-370
- https://doi.org/10.1143/jjap.32.l368
Abstract
Indium arsenide layers of various thicknesses were grown on semi-insulating GaAs by low-pressure metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMIn) and tertiarybutylarsine (TBAs) as precursors. On the assumption that properties of the underlying grown layer do not change during growth of the upper layer, the in-depth profile of the electrical property of the epitaxial layer was obtained by the differential Hall effect. It was proved that the uppermost layer, 1.8 µm from the interface, has an electron mobility of 61300 cm2/V·s and a carrier concentration of 2.1×1016 cm-3 (the average mobility of 29800 cm2/V·s and average carrier concentration of 1.8×1016 cm-3) at 80 K.Keywords
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