Epitaxial growth of InSb on semi-insulating GaAs by low pressure MOCVD
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 371-376
- https://doi.org/10.1016/0022-0248(92)90486-3
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Indium Antimonide Layer Grown on Semi-insulating GaAs by Low-Pressure Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1992
- High-mobility InSb grown by organometallic vapor phase epitaxyApplied Physics Letters, 1991
- Growth of InSb on GaAs by metalorganic chemical vapor depositionJournal of Crystal Growth, 1991