Indium Antimonide Layer Grown on Semi-insulating GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition
- 1 February 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (2A) , L68
- https://doi.org/10.1143/jjap.31.l68
Abstract
An indium antimonide single crystal is epitaxially grown on a semi-insulating GaAs. Layer thickness is changed from 0.15 to 4.2 µm. The X-ray diffraction peak (400) position does not change much with thickness, while its width decreases with increasing thickness. Crystal orientation is (100) from the early stage, and its crystallinity improves with thickness. The 300 K mobility increases from 940 to 25000 cm2/V·s and carrier concentration decreases from 1.1×1018 to 8.0×1016 cm-3 with thickness. Their dependence on thickness and temperature indicates that lattice scattering, ionized impurity scattering and defect-related scattering all contribute to limiting the mobility.Keywords
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