Design of a low-power 10 Gb/s Si bipolar 1:16-demultiplexer IC
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 31 (1) , 128-131
- https://doi.org/10.1109/4.485875
Abstract
No abstract availableKeywords
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- A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contactsIEEE Electron Device Letters, 1990