A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts
- 1 September 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (9) , 412-414
- https://doi.org/10.1109/55.62973
Abstract
An experimental bipolar transistor structure with self-aligned base-emitter contacts formed using one polysilicon layer is presented with geometries and frequency performance comparable to those of double-polysilicon structures. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 0.2- mu m emitter-base polysilicon contact separation. A 0.4- mu m emitter width is achieved with conventional 0.8- mu m optical lithography. Scaling of the emitter width of 0.3 mu m has been performed with minimal degradation of device performance, and scaling of the emitter width pattern to 0.2 mu m has been demonstrated. These dimensions are the smallest achieved in single-polysilicon structures with polysilicon base contacts and are comparable to those achieved in double-polysilicon structures. The STRIPE structure has been used to fabricate transistors with f/sub t/ as high as 33.8 GHz.<>Keywords
This publication has 10 references indexed in Scilit:
- Technology and physics of polysilicon emittersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 1.5 nsec ECL-PAL realization using advanced single poly technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Perimeter effect in advanced self-aligned bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A sub-30 psec Si bipolar LSI technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Ultrashallow Diffused Emitter-Base Profiles For Bipolar Device Applications Using Rapid Thermal ProcessingPublished by SPIE-Intl Soc Optical Eng ,1990
- A 20-ps Si bipolar IC using advanced super self-aligned process technology with collector ion implantationIEEE Transactions on Electron Devices, 1989
- Ultra-Shallow Diffused Emitter-Base Profiles Fabricated by Rapid Thermal Processing for High Speed Bipolar DevicesMRS Proceedings, 1989
- Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistorsIEEE Transactions on Electron Devices, 1988
- Emitter resistance and performance tradeoff of submicrometer self-aligned double-polysilicon bipolar devicesIEEE Transactions on Electron Devices, 1988
- A bird's beak free local oxidation technology feasible for VLSI circuits fabricationIEEE Transactions on Electron Devices, 1982