Insulating Cs overlayer on InSb(110)
- 15 September 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (11) , 5951-5954
- https://doi.org/10.1103/physrevb.44.5951
Abstract
Cesium overlayers on room-temperature InSb(110) have been studied with scanning tunneling microscopy and spectroscopy. A two-dimensional (2D) overlayer is obesrved, consisting of four-atom Cs(110)-like planar clusters arranged in a c(2×6) superlattice. Interestingly, current-versus-voltage (I-V) spectra exhibit a band gap of ≊0.6 eV, larger than the substrate band gap of ≊0.15 eV. The I-V spectra are very similar to those observed on the similar 2D overlayer on GaAs(110), suggesting that the measured gap is a property of the 2D Cs film. The possible origins of this insulating behavior are discussed.Keywords
This publication has 25 references indexed in Scilit:
- Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changesPhysical Review Letters, 1991
- Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metalsPhysical Review Letters, 1991
- Semiconductor-to-metal transition in an ultrathin interface: Cs/GaAs(110)Physical Review Letters, 1990
- Scanning-tunneling-microscopy study of InSb(110)Physical Review B, 1990
- Direct determination of III-V semiconductor surface band gapsPhysical Review B, 1990
- Scanning tunneling microscopy and first-principles theory of the Sn/GaAs(110) surfacePhysical Review B, 1989
- Quasiparticle intepretation of photoemission spectra and optical properties of GaAs(110)Physical Review Letters, 1989
- Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1×1)BiPhysical Review B, 1989
- Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structurePhysical Review B, 1985
- Sb Overlayers on (110) Surfaces of III-V Semiconductors: Structure and BondingPhysical Review Letters, 1984