Solubility and origin of thermally induced recombination centres in n-type and p-type silicon
- 16 August 1975
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 30 (2) , K109-K113
- https://doi.org/10.1002/pssa.2210300245
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Quenched-in centers in silicon p+n junctionsSolid-State Electronics, 1974
- Thermally induced defects in n-type and p-type siliconPhysica Status Solidi (a), 1973
- Decay of excess carrier concentration in thermally treated siliconPhysica Status Solidi (a), 1973
- Recombination at iron atoms and at thermally generated lattice defects in n-siliconPhysica Status Solidi (a), 1972
- Impurity conduction in quenched p-type siliconPhysica Status Solidi (a), 1970
- Defects in Quenched SiliconPhysica Status Solidi (b), 1969
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967
- Quenched-In Defects in p-Type SiliconJournal of Applied Physics, 1964