Single‐site theory of Wannier excitons in disordered semiconductors. I. General considerations

1 August 1979

journal article
research article
Published by Wiley in Physica Status Solidi (b)

Vol. 94 (2) , 457-468
https://doi.org/10.1002/pssb.2220940216

Abstract

Starting from the general theory of interacting disordered systems a Bethe‐Salpeter equation is derived which describes Wannier excitons in disordered semiconductors. It contains both the Coulomb and the disorder vertex. The former is taken in the static v_s approximation whereas the latter is derived from a single‐site approximation. Replacing the Coulomb vertex by an approximate product kernel this equation can be solved. An expression for the imaginary part of the dielectric function is obtained which is accessible to numerical evaluations.

Keywords

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