On the no-phonon structure in mixed crystals with indirect band structure
- 1 March 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 86 (1) , 311-318
- https://doi.org/10.1002/pssb.2220860136
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The location of the lowest conduction band minima in gallium phosphide from bound exciton luminescenceJournal of Luminescence, 1976
- Electroreflectance and Wavelength Modulation Study of the Direct and Indirect Fundamental Transition Region of In1−xGaxPPhysica Status Solidi (b), 1976
- Indirect Absorption edge of In1–xGaxP Mixed Crystals Studied by Wavelength ModulationPhysica Status Solidi (b), 1975
- On the theory of the Wannier‐Mott excitons in disordered semiconductorsPhysica Status Solidi (b), 1975
- No‐phonon and phonon‐assisted exciton absorption in GaAs1 − x, Px with indirect energy gapPhysica Status Solidi (b), 1972
- Binding to Isoelectronic Impurities in SemiconductorsPhysical Review Letters, 1972
- Pair Effects in Substitutional Alloys. I. Systematic Analysis of the Coherent-Potential ApproximationPhysical Review B, 1972
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Intrinsic Absorption-Edge Spectrum of Gallium PhosphidePhysical Review B, 1966
- Note on Electronic State of Random Lattice. IIProgress of Theoretical Physics, 1966