The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STM
- 1 April 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 113-114, 349-353
- https://doi.org/10.1016/s0169-4332(96)00777-5
Abstract
No abstract availableKeywords
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