Surfactant effect of H atoms on the suppression of Ge segregation in Si overgrowth on Ge(n ML)/Si(100) substrates by gas source molecular beam epitaxy
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 944-949
- https://doi.org/10.1016/0022-0248(95)80079-r
Abstract
No abstract availableKeywords
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