Admittance-voltage characteristic of an MOS capacitor formed over p-on-n semiconductor structure
- 31 August 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (8) , 807-809
- https://doi.org/10.1016/0038-1101(80)90095-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- C-V and G-V characteristics of ion-implanted MOS structures depending upon the geometrical structure of the implanted regionJournal of Applied Physics, 1977
- Distributed semiconductor R-C network analysis for various electrode configurationsSolid-State Electronics, 1976
- Determination of impurity and mobility distributions in epitaxial semiconducting films on insulating substrate by C-V and Q-V analysisApplied Physics Letters, 1974
- Lateral AC current flow model for metal-insulator-semiconductor capacitorsIEEE Transactions on Electron Devices, 1965