Role of oxygen vacancy defect states in the n-type conduction of β-Ga2O3
- 1 October 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (7) , 3792-3796
- https://doi.org/10.1063/1.371289
Abstract
Based on semiempirical quantum-chemical calculations, the electronic band structure of β-Ga2O3 is presented and the formation and properties of oxygen vacancies are analyzed. The equilibrium geometries and formation energies of neutral and doubly ionized vacancies were calculated. Using the calculated donor level positions of the vacancies, the high temperature n-type conduction is explained. The vacancy concentration is obtained by fitting to the experimental resistivity and electron mobility.This publication has 19 references indexed in Scilit:
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