The minimum metallic conductivity in heavily doped semiconductors The experimental evidence and its interpretation
- 1 February 1983
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 47 (2) , L17-L24
- https://doi.org/10.1080/13642812.1983.9728437
Abstract
A summary is given of some recent conclusions by the authors and others on the nature of the metal-insulator transition in Si : P, particularly in the light of recent observations by Thomas and co-workers. It is maintained that in uncompensated semiconductors the transition is first order, and that work on compensated materials at very low temperatures is needed to find out if a ‘minimum metallic conductivity’ exists.Keywords
This publication has 16 references indexed in Scilit:
- Electron GlassPhysical Review Letters, 1982
- Logarithmic and power law corrections in two-dimensional electronic transportJournal of Physics C: Solid State Physics, 1982
- Diffusion corrections to the conductivity of a disordered 3D electron gasJournal of Physics C: Solid State Physics, 1982
- A self-consistent treatment of Anderson localizationSolid State Communications, 1981
- Magnetoresistance and Hall effect in a disordered two-dimensional electron gasPhysical Review B, 1980
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- Coulomb gap in disordered systemsJournal of Physics C: Solid State Physics, 1976
- Structure of the Impurity Band and Magnetic‐Field‐Induced Metal‐Non‐Metal Transition in n‐Type InSbPhysica Status Solidi (b), 1975
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965