Characterization of the intrinsic double acceptor in undoped p-type gallium arsenide

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Abstract
A detailed study of the dominant double acceptor found in p‐type, undoped GaAs grown by the liquid‐encapsulated Czochralski technique has been performed using temperature‐dependent Hall effect, infrared absorption, spectral photoconductivity, and photoluminescence. Improved fitting techniques are presented for analyzing the temperature‐dependent Hall‐effect data. A dependence of the activation energy of the neutral state of the double acceptor as determined by Hall effect on the concentration of the defect has been observed and is discussed in terms of prevalent theories. The ionization energy of this level as determined by all three optical techniques is constant and independent of any concentration. Additional data on the correlation between the concentration of the double acceptor and the boron concentration in the material is presented. A model for this correlation is presented that is consistent with the isolated gallium antisite model for the double acceptor. Aluminum and indium alloyed samples were studied and no additional acceptors that could be attributed to these isovalent dopants were discovered.