NOx response of tin dioxide based gas sensors
- 1 October 1993
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 16 (1-3) , 349-353
- https://doi.org/10.1016/0925-4005(93)85208-r
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Highly sensitive and selective NOx and NO2 sensor based on Cd-doped SnO2 thin filmsSensors and Actuators B: Chemical, 1991
- Reactively sputtered indium tin oxide polycrystalline thin films as NO and NO2 gas sensorsThin Solid Films, 1990
- Prototype structure for systematic investigations of thin-film gas sensorsSensors and Actuators B: Chemical, 1990
- Radio frequency magnetron sputtering growth and characterization of indium-tin oxide (ITO) thin films for NO2 gas sensorsSensors and Actuators, 1988
- Selectivity in semiconductor gas sensorsSensors and Actuators, 1987
- The interaction of tin oxide films with O2, H2, NO, and H2SJournal of Vacuum Science and Technology, 1981
- Semiconductor gas sensorsSensors and Actuators, 1981
- Homogeneous semiconducting gas sensorsSensors and Actuators, 1981
- Oxygen chemisorption on tin oxide: Correlation between electrical conductivity and EPR measurementsJournal of Vacuum Science and Technology, 1980
- Thin-film semiconductor NOxsensorIEEE Transactions on Electron Devices, 1979