Internal photoemission spectroscopy for a PtSi/p-type Si Schottky-barrier diode
- 15 May 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (19) , 13187-13191
- https://doi.org/10.1103/physrevb.51.13187
Abstract
Internal photoemission spectroscopy characteristics for a PtSi/p-type Si Schottky-barrier diode have been studied. The authors present a one-dimensional calculation of the internal photoemission spectroscopy for Schottky-barrier diodes, taking into account the effective barrier height and the position from the PtSi/p-type Si interface. The internal photoemission spectroscopy characteristics so calculated are then compared with the measured characteristics obtained for PtSi/p-type Si Schottky-barrier diodes under different PtSi thicknesses and applied voltage conditions. The hot hole escape depths in both PtSi and Si are then determined and the excitation energy effects are presented.Keywords
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