Mobility modulation in a quasi-one-dimensional Si-MOSFET with a dual-gate structure
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (1) , 20-22
- https://doi.org/10.1109/55.144938
Abstract
The electrical transport characteristics of a quasi-one-dimensional Si-MOSFET with a dual-gate structure are studied. In this device, the width of the one-dimensional channel can be changed continuously using the field effect and the intervals between one-dimensional subbands as well. By making part of the channel narrower, strong oscillations in differential conductance, even negative differential conductance, have been observed at 4.2 K, indicating the enhanced modulation of the electron mobility by inter-subband scattering suppression.Keywords
This publication has 10 references indexed in Scilit:
- Si resonance transport devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Quantized electron transport in amorphous-silicon memory structuresPhysical Review Letters, 1991
- One-dimensional subband effects in the conductance of multiple quantum wires in Si metal-oxide-semiconductor field-effect transistorsPhysical Review B, 1990
- Fabrication of Deep Sub-µm Narrow-Channe1 Si-MOSFET's with Twofold-Gate StructuresJapanese Journal of Applied Physics, 1989
- One-dimensional transport and the quantisation of the ballistic resistanceJournal of Physics C: Solid State Physics, 1988
- Quantized conductance of point contacts in a two-dimensional electron gasPhysical Review Letters, 1988
- Observation of resonant tunneling in silicon inversion layersPhysical Review Letters, 1986
- Universal conductance fluctuations in silicon inversion-layer nanostructuresPhysical Review Letters, 1986
- Universal Conductance Fluctuations in Narrow Si Accumulation LayersPhysical Review Letters, 1986
- Quasi One-Dimensional Conduction in Multiple, Parallel Inversion LinesPhysical Review Letters, 1986