Si - noble metal (Au,Cu,Ag) interface formation studies by AES
- 31 December 1990
- journal article
- Published by Elsevier in Journal of Electron Spectroscopy and Related Phenomena
- Vol. 52, 103-112
- https://doi.org/10.1016/0368-2048(90)85008-w
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Chemisorption of Si on Al(111) surfaces: A local-chemical-bond analysis from Auger transition density of statesSurface Science, 1986
- Electronic properties on silicon-transition metal interface compoundsSurface Science Reports, 1985
- Electronic properties of metal-rich Au-Si compounds and interfacesJournal of Physics C: Solid State Physics, 1982
- Auger electron spectroscopy - a local probe for solid surfacesSurface Science Reports, 1981
- Chemical bonding and electronic structure ofSiPhysical Review B, 1980
- A secondary electron emission correction for quantitative auger yield measurementsSurface Science, 1980
- Chemical effect in (LVV) Auger spectra of third-period elements (Al, Si, P, and S) dissolved in copperApplied Physics Letters, 1979
- Global methods in the inversion of a self-convolutionJournal of Electron Spectroscopy and Related Phenomena, 1979
- A Calculation of the Electronic Structure of an Impurity Atom of Non-Transition Element in CopperJournal of the Physics Society Japan, 1976
- Theory of semiconductor surfacesSurface Science, 1975