A Depletion-Load, p-Channel, Bipolar-IGFET Technology
- 1 January 1975
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 54 (1) , 69-79
- https://doi.org/10.1002/j.1538-7305.1975.tb02826.x
Abstract
A high-performance, depletion-load, bipolar-igfet technology is described. The optimization of device and circuit parameters, the ion-implanted depletion-load fabrication process, and the high-speed input and output circuits, which allow direct inter...Keywords
This publication has 2 references indexed in Scilit:
- Depletion-mode IGFET made by deep ion implantationIEEE Transactions on Electron Devices, 1973
- A high-performance N-channel MOSLSI using depletion-type load elementsIEEE Journal of Solid-State Circuits, 1972