Temperature-dependent tunneling through thermally grown SiO2 on n-type 4H– and 6H–SiC
- 21 February 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (8) , 1039-1041
- https://doi.org/10.1063/1.125931
Abstract
The temperature dependence of field emission through thermally grownsilicon dioxide ( SiO 2 ) on n-type 4H and 6H siliconcarbide(SiC) substrates is reported. Room-temperature SiO 2 /SiC barrier heights, Φ B , of 1.92 and 2.12 V are extracted for the 4H– and 6H–SiC samples, respectively, using a Fowler–Nordheim analysis. Barrier heights of 2.2 and 2.4 V along with a linear temperature-dependent barrier height lowering, ΔΦ B /ΔT, of 2.4 and 2.0 mV/K for 4H– and 6H–SiC are extracted using an alternative analytical expression for tunneling from semiconducting substrates derived previously. In both analyses, the temperature-dependent flatband voltage, using the measured room-temperature value, was included.Keywords
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