Growth of ultrathin films of copper onto α-Al2O3(0001): Mechanism and epitaxy
- 1 June 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 201 (2) , 267-279
- https://doi.org/10.1016/0040-6090(91)90116-f
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Electronic structure of metal–sapphire interfacesSurface and Interface Analysis, 1990
- Ion beam mixing of metal-sapphire interfacesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Laser enhanced adhesion of copper films to sapphire substratesJournal of Vacuum Science & Technology A, 1988
- Copper growth on Al2O3 and Al: An auger studySurface Science, 1987
- Ion induced adhesion via interfacial compoundsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Photoemission study of two model catalysts using synchrotron radiationSurface Science, 1985
- Preparation and analysis of particulate metal depositsThin Solid Films, 1985
- Shear strength of metal-sapphire contactsJournal of Applied Physics, 1976
- Ion-etch characteristics of epitaxial copper on sapphireJournal of Materials Science, 1970
- THE EPITAXY OF COPPER ON SAPPHIREApplied Physics Letters, 1968