PHOTOEMISSION FROM InP-Cs-O
- 1 February 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (3) , 76-78
- https://doi.org/10.1063/1.1651906
Abstract
Photoelectric measurements on cleaved p+ InP show that a process of cesiation and oxidation can produce a work function lower than the InP bandgap. Efficient photoemission results, with luminous efficiencies of 450 μA/lumen or better, and a threshold at 1.24 eV (1 μ).Keywords
This publication has 5 references indexed in Scilit:
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- Photoelectric Emission and Work Function of InPPhysical Review B, 1966
- GaAs-Cs: A new type of photoemitterSolid State Communications, 1965
- Infrared Dielectric Constant and Ultraviolet Optical Properties of Solids with Diamond, Zinc Blende, Wurtzite, and Rocksalt StructureJournal of Applied Physics, 1965
- Exciton Absorption and Emission in InPPhysical Review B, 1964