Effects of low-dose Si implantation damage on diffusion of phosphorus and arsenic in Si
- 18 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (7) , 732-734
- https://doi.org/10.1063/1.104530
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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