The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation

This publication has 41 references indexed in Scilit:

• Electrical properties of shallow p+-n junctions formed by BF2 ion implantation in germanium preamorphized silicon
  Applied Physics Letters, 1988
• Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions
  MRS Proceedings, 1986
• 1—2-keV Boron implants into silicon
  IEEE Electron Device Letters, 1985
• Application of Rapid Isothermal Annealing to Shallow p‐n Junctions via BF 2 Implants
  Journal of the Electrochemical Society, 1985
• Rapid thermal annealing characteristics of As+- and BF+2 -implanted Si
  Applied Physics Letters, 1984
• Rapid isothermal annealing of boron ion implanted junctions
  Journal of Applied Physics, 1983
• Short Time annealing of As and B Ion Implanted Si using Tungsten-Halogen Lamps
  MRS Proceedings, 1983
• MOS Device and technology constraints in VLSI
  IEEE Transactions on Electron Devices, 1982
• The Influence of the Amorphous Phase on Boron Atom Distributions in Ion Implanted Silicon
  Published by Springer Nature ,1973
• A New Method for Boron Doping of Silicon by Implantation of BF2-Molecules
  Published by Springer Nature ,1971