Structure of Thermally-Induced Microdefects in Czochralski Silicon
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Early stages of oxygen segregation and precipitation in siliconJournal of Applied Physics, 1984
- Structure of thermally induced microdefects in Czochralski silicon after high-temperature annealingApplied Physics Letters, 1983
- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979
- Defects in silicon substratesJournal of Vacuum Science and Technology, 1977
- Oxygen precipitation and the generation of dislocations in siliconPhilosophical Magazine, 1976
- Characterization of structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1976