Determination of relative impurity concentrations using photoluminescence: A case study of the Si: (B,In) system

15 November 1980

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 37 (10) , 959-961
https://doi.org/10.1063/1.91776

Abstract

We report on a systematic study of the use of photoluminescence for the determination of relative impurity concentrations. The system chosen for the study was Si with a shallow level, B, in the presence of a deeper level, In. The results show that, at sufficiently low concentrations, the photoluminescence intensities can be used to determine the relative impurity concentrations. At higher In concentrations (N_In ≳10¹⁵ cm⁻³) we find that exciton transfer from B to In results in a quenching of the B photoluminescence intensity. For N_In ≳2×10¹⁶ cm⁻³, B photoluminescence was not observed in any sample studied.

Keywords

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