Recombination in narrow-gap semiconductors
- 31 August 1980
- journal article
- review article
- Published by Elsevier in Physics Reports
- Vol. 63 (5) , 265-300
- https://doi.org/10.1016/0370-1573(80)90113-1
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Auger-Rekombination in HalbleiternPublished by Springer Nature ,2007
- Life time measurements in PbTe and PbSnTeSolid-State Electronics, 1978
- The effect of single-phonon and plasmon recombination on the lifetime in n-Hg1−xCdxTe with magnetically tuned bandgapSolid-State Electronics, 1978
- The Auger-effect in Hg1−xCdxTeSolid-State Electronics, 1978
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Recombination coefficients in extrinsicn-InSbZeitschrift für Physik B Condensed Matter, 1976
- Non‐Radiative Transitions in SemiconductorsPhysica Status Solidi (b), 1970
- Magnetic Field Dependence of Laser Emission inDiodesPhysical Review Letters, 1969
- Recombination MechanismsPhysica Status Solidi (b), 1968
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952