Absence of excited molecules in sputtering processes
- 1 February 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (3) , 1600-1602
- https://doi.org/10.1103/physrevb.31.1600
Abstract
We report and discuss a negative finding, that formation of excited molecules is a relatively rare process in heavy-ion induced sputtering. This holds for pure, elemental targets under ultrahigh-vacuum conditions as well as when oxygen is present at the target surface.Keywords
This publication has 17 references indexed in Scilit:
- Sputtering models—A synoptic viewRadiation Effects, 1983
- Formation of molecular ions during sputteringPhysical Review B, 1981
- Emission mechanisms of titanium oxide ions during sputteringPhysical Review B, 1981
- Physical mechanisms of sputteringPhysics Reports, 1981
- Energy and mass distributions of sputtered particlesJournal of Nuclear Materials, 1980
- Spectral Investigation of Excited Sputtered Aluminium Particles and the Influence of Oxygen During Ion IrradiationPhysica Scripta, 1979
- Developments in secondary ion mass spectroscopy and applications to surface studiesSurface Science, 1975
- Diatomic versus atomic secondary ion emissionApplied Physics Letters, 1975
- Surface investigation of solids by the statical method of secondary ion mass spectroscopy (SIMS)Surface Science, 1973
- Observation of clusters in a sputtering ion sourceRadiation Effects, 1973