Transients in p-n-junction solar cells
- 11 March 1976
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 9 (4) , 631-641
- https://doi.org/10.1088/0022-3727/9/4/014
Abstract
Expressions for transient photocurrents and photovoltages are derived by solving the time-dependent diffusion equation for both horizontal- and vertical-junction cells. Four cases are dealt with: (i) when the light is switched off at t=0; (ii) when the light is switched on at t=0; (iii) when the cell is illuminated by a square pulse of finite duration; (iv) when it is illuminated by a delta pulse. Assuming certain values for the parameters of the material of the cell, numerical results are reported for conventional cells of diffused layer thickness 0.5 and 5 mu m and one vertical-junction cell. The use of such studies for measurement of life times and diffusion lengths of carriers is suggested.Keywords
This publication has 5 references indexed in Scilit:
- Surface recombination and internal currents in a vertical-junction solar cellJournal of Physics D: Applied Physics, 1975
- Transient photovoltaic effects in anisotropic semiconductorsPhysical Review B, 1974
- An Experimental Investigation of the Maximum Photo-emf of a p-n JunctionJournal of Applied Physics, 1967
- Response of a Partially Illuminated Photovoltaic P-N Junction Cell†International Journal of Electronics, 1966
- High-speed photodetectorsProceedings of the IEEE, 1966