Photoconductivity in amorphous thin films of Ge22Se78−xBix
- 31 July 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 59 (3) , 163-166
- https://doi.org/10.1016/0038-1098(86)90201-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Role of dopants in pressure-induced effects in glassy GeSe3·5 containing Bi and SbPhilosophical Magazine Part B, 1985
- Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniquesSolid State Communications, 1984
- Electrical and optical properties of n-type semiconducting chalcogenide glasses in the system Ge-Bi-SeJournal of Applied Physics, 1980
- Photoconductivity of amorphous compound semiconductors involving elements from groups IV, V, and VIJournal of Applied Physics, 1976
- Transport and recombination properties of amorphous arsenic telluridePhysical Review B, 1975
- Transport and localized levels in amorphous binary chalcogenidesApplied Physics Letters, 1974
- Trap-limited processes in some chalcogenide glassesJournal of Non-Crystalline Solids, 1972
- Analysis of Photoconductivity in Amorphous ChalcogenidesJournal of Applied Physics, 1972
- Photoconductivity of amorphous chalcogenide alloy filmsJournal of Non-Crystalline Solids, 1970