Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniques
- 30 September 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 51 (9) , 739-742
- https://doi.org/10.1016/0038-1098(84)90958-x
Abstract
No abstract availableKeywords
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