Role of dopants in pressure-induced effects in glassy GeSe3·5 containing Bi and Sb
- 1 June 1985
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 51 (6) , L63-L68
- https://doi.org/10.1080/13642818508243146
Abstract
The Bridgman anvil high-pressure technique has been used to investigate the role of dopants in pressure-induced effects in the electrical resistivities of amorphous (GeSe3·5)100-xMx (M = Bi, Sb). The results for Sb-doped glasses are found to be entirely different from those of Bi-doped glasses. This difference is discussed on the basis of the presence of different types of molecular units in the two glassy systems.Keywords
This publication has 9 references indexed in Scilit:
- Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressureJournal of Non-Crystalline Solids, 1983
- Electrical properties of glasses in the GeBiSbSe and GeBiS systemsJournal of Non-Crystalline Solids, 1983
- Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBixJournal of Non-Crystalline Solids, 1983
- Principle of massive support in the opposed anvil high pressure apparatusPramana, 1982
- Glassy SemiconductorsPublished by Springer Nature ,1981
- Topology of covalent non-crystalline solids II: Medium-range order in chalcogenide alloys and ASi(Ge)Journal of Non-Crystalline Solids, 1981
- High pressure clamp for electrical measurements up to 8 GPa and temperature down to 77 KReview of Scientific Instruments, 1980
- Semiconductor-metal and superconducting transitions induced by pressure in amorphousPhysical Review B, 1977
- Conduction in non-Crystalline systemsPhilosophical Magazine, 1970