Effects of [H2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- 1 February 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (2R)
- https://doi.org/10.1143/jjap.32.907
Abstract
Effects of [H2S]/[DMZn] molar ratio on the crystallinity and surface morphology of epitaxial ZnS films grown on glass substrate by low-pressure metalorganic chemical vapor deposition have been studied. The surface morphology has been evaluated and the results show it to be relatively flat and uniform. The crystallization has also been measured. We find that the samples deposited under the following conditions have better crystallinity: even after the deposition was completed, H2S flux was still introduced into the reactor until the substrate temperature fell to 200°C. From the experimental results, an optimum [H2S]/[DMZn] molar ratio can be concluded to exist somewhere near 20.Keywords
This publication has 8 references indexed in Scilit:
- High luminous efficiency thin-film electroluminescent devices with low resistivity insulating materialsJournal of Applied Physics, 1992
- Controlling the sulphur content of ZnSe1−ySy epitaxial layers grown by metalorganic chemical vapor deposition using diethyl selenide, hydrogen sulphide, and dimethylzincApplied Physics Letters, 1991
- Excitonic luminescence and the effect of high excitation in ZnSeZnS strained-layer superlattices grown on ZnS substratesJournal of Crystal Growth, 1990
- Optimum growth condition of single-crystalline undoped ZnS grown by the molecular-beam-epitaxial method using a H2S gas sourceJournal of Applied Physics, 1988
- Post-annealing effects on the surface morphology and on the photoluminescence of molecular beam epitaxial ZnS on (100)GaAsJournal of Crystal Growth, 1988
- Growth of ZnS by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1983
- The structure and optical properties of polycrystalline ZnSχSe1-χ prepared by chemical vapour depositionJournal of Crystal Growth, 1982
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978