Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
- 16 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (20) , 2953-2955
- https://doi.org/10.1063/1.122641
Abstract
Ohmic contact to p-type GaN with the lowest contact resistivity was developed by the surface treatment prior to Pd/Au metal deposition. The contact resistivity drastically decreased from 2.9×10−2 to 4.3×10−4 Ω cm2 by the surface treatment using aqua regia. The surface treatment plays a role in removing the surface oxide formed on p-type GaN during epitaxial growth, and subsequently in reducing the barrier height for holes at the interface of Pd/p-type GaN, resulting in the good ohmic contacts to p-type GaN.Keywords
This publication has 8 references indexed in Scilit:
- Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substratesApplied Physics Letters, 1998
- Schottky barriers and contact resistances on p-type GaNApplied Physics Letters, 1996
- Very low resistance multilayer Ohmic contact to n-GaNApplied Physics Letters, 1996
- Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaNMRS Proceedings, 1996
- Low resistance ohmic contacts on wide band-gap GaNApplied Physics Letters, 1994
- Metal contacts to gallium nitrideApplied Physics Letters, 1993
- The advanced unified defect model for Schottky barrier formationJournal of Vacuum Science & Technology B, 1988
- The electrical characteristics of degenerate InP Schottky diodes with an interfacial layerJournal of Applied Physics, 1982