Metal-insulator semiconductor Schottky-barrier solar cells fabricated on InP
- 15 February 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (4) , 259-261
- https://doi.org/10.1063/1.92336
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- InP metal-insulated-semiconductor Schottky contacts using surface oxide layers prepared with bromine waterJournal of Applied Physics, 1980
- High-efficiency silicon minMIS solar cells—Design and experimental resultsIEEE Transactions on Electron Devices, 1980
- Characteristics of MOS solar cells built on (n-type) InP substratesIEEE Transactions on Electron Devices, 1980
- InP (MIS) Schottky Barrier Solar CellsJapanese Journal of Applied Physics, 1980
- Electrical characteristics of GaAs MIS Schottky diodesSolid-State Electronics, 1979
- MIS solar cells: A reviewIEEE Transactions on Electron Devices, 1978
- n-indium tin oxide/p-indium phosphide solar cellsApplied Physics Letters, 1977
- High efficiency n-CdS/p-InP solar cells prepared by the close-spaced techniqueSolid-State Electronics, 1977
- A model for Schottky-barrier solar cell analysisJournal of Applied Physics, 1976