Analysis of temperature dependence of Hall mobility of nondoped and nitrogen-doped β-SiC single crystals grown by chemical vapor deposition

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Abstract
Temperature dependencies of Hall mobility of nondoped and nitrogen‐doped n‐type β‐SiC films have been analyzed using a conventional theoretical model. Considering acoustic, polar optical, and piezoelectric lattice scatterings, as well as ionized and neutral impurity scatterings, theoretical calculations well fitted to the experimental results are obtained at 70–1000 K. Contributions of acoustic, polar optical, and piezoelectric scatterings to the whole lattice scattering are 84%, 14%, and 2% at 300 K, respectively. Impurity compensation ratio NA/ND of nondoped films increases from 0.45 to 0.96 with increasing Si/C ratio in the source gases. Nitrogen‐doped films show constant compensation ratios of 0.25–0.30 with various doping amounts. These values are different from the previous results obtained by the analysis of temperature dependencies of carrier concentration.