Effect of vacancy reduction on diffusion in semiconductors
- 14 September 1982
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 15 (9) , 1741-1750
- https://doi.org/10.1088/0022-3727/15/9/019
Abstract
A fairly simple diffusion mechanism is described in which the concentration of the diffusing species is relatively high and the self-diffusion coefficient of the host atoms is small. Diffusion profiles are computed and it is shown that the anomalous 'double profile' often demonstrated by semiconductor systems can be obtained by this means. It is suggested that the mechanism may be operative when sulphur diffuses into GaAs at high temperatures, and computed profiles are fitted as closely as possible to experimental profiles obtained previously for this system. In the course of the fitting procedure estimates are made for the concentration of arsenic vacancies, the diffusion coefficient of sulphur and the self-diffusion coefficient of arsenic in GaAs at 1120 degrees C.Keywords
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