An AC conductance technique for measuring self-heating in SOI MOSFET's
- 1 February 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (2) , 67-69
- https://doi.org/10.1109/55.386025
Abstract
In this paper, we present a new technique for isolating the electrical behavior of an SOI MOSFET's from the self-heating effect using an AC conductance method. This method reconstructs an I-V curve by integrating high frequency output conductance data. The heating effect is eliminated when the frequency is much higher than the inverse of the thermal time constant of the SOI device. We present measurement results from SOI MOSFET's that demonstrate that heating can indeed be significant in SOI devices.Keywords
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