Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S)
- https://doi.org/10.1143/jjap.30.3677
Abstract
A simple analytical model for device characteristics of silicon-on-insulator (SOI) MOSFETs is proposed. The effect of the self-heating is incorporated into a pseudo-2-dimensional drain-current model through an analytical expression using a thermal distribution-constant circuit. The device characteristics calculated with the model were found to agree well with experimental drain-current characteristics.Keywords
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