Effect of reconstruction of a semiconductor surface on the crystal growth
- 1 June 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (11) , 593-596
- https://doi.org/10.1063/1.88006
Abstract
It is well established that most low‐index semiconductor surfaces reconstruct in contact with vacuum or vapor. Covalent bonding considerations imply that they also reconstruct in contact with the liquid. Conventional precipitation theory shows that these first‐order transitions should have important consequences on the growth of the crystal. The kinetics of the Si (111) 2×1 to 7×7 reconstruction are explained and the consequent effect upon the growth is found in the observation by de Kock et al. of a 6‐orders‐of‐magnitude drop in vacancy cluster concentration at a pull rate of 0.5 cm/min.Keywords
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