Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFETs
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (1) , 14-20
- https://doi.org/10.1109/16.658806
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Off-state breakdown effects on gate leakage current in power pseudomorphic AlGaAs/InGaAs HEMTsIEEE Electron Device Letters, 1996
- Temperature dependence of gate forward turn-on voltage (Vf) of i-Al/sub 0.3/Ga/sub 0.7/As/n-GaAs HIGFET'sIEEE Transactions on Electron Devices, 1994
- Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatmentJournal of Applied Physics, 1993
- A novel passivation technique of GaAs power MESFETsApplied Surface Science, 1992
- Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effectPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Surface potential effect on gate—Drain avalanche breakdown in GaAs MESFET'sIEEE Transactions on Electron Devices, 1987
- Electronic and microstructural properties of disorder-induced gap states at compound semiconductor–insulator interfacesJournal of Vacuum Science & Technology B, 1987
- Interelectrode Metal Migration on GaAs8th Reliability Physics Symposium, 1987
- The role of the device surface in the high voltage behaviour of the GaAs MESFETSolid-State Electronics, 1986
- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981