Optical Nonlinearities of GaAs‐Based Epitaxial Structures for All‐Optical Switching
- 1 May 1990
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 159 (1) , 181-189
- https://doi.org/10.1002/pssb.2221590120
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Criteria for optical bistability in a lossy saturating Fabry-PerotIEEE Journal of Quantum Electronics, 1989
- Monolithic GaAs/AlAs optical bistable étalons with improved switching characteristicsApplied Physics Letters, 1988
- Optically pumped GaAs surface-emitting laser with integrated Bragg reflectorElectronics Letters, 1988
- Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAsApplied Physics Letters, 1988
- Band-edge nonlinearities in direct-gap semiconductors and their application to optical bistability and optical computingJournal of Applied Physics, 1988
- GaAs-AlAs monolithic microresonator arraysApplied Physics Letters, 1987
- Optical bistability and gating in metalorganic vapor phase epitaxy grown GaAs étalons operating in reflectionApplied Physics Letters, 1987
- Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structuresPhysical Review B, 1985
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984
- Cooperative effects and bistability for resonance fluorescenceOptics Communications, 1976