Photo-induced currents in Ag-Al2O3-Al structures: Detection characteristics at 325 nm
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (4) , 1543-1547
- https://doi.org/10.1063/1.323875
Abstract
We report the detection characteristics of planar Ag‐Al2O3‐Al structures at 325 nm as a function of angle, polarization, and bias. The experimental results are in excellent agreement with numerical computations based on a simple model in which the photoinduced currents are assumed to be proportional to the net absorptions in the Ag and Al films of the multilayered structure. Responsivities of the order of 1 V/W, and the simplicity of construction and operation of such metal‐barrier structures indicate their usefulness as ultraviolet detectors.This publication has 20 references indexed in Scilit:
- Internal photoemission and quantum-mechanical transmission coefficientPhysica Status Solidi (a), 1976
- Results and problems of internal photoemission in sandwich structuresPhysica Status Solidi (a), 1976
- Theory of internal photoemission in sandwich structuresPhysics Reports, 1976
- Direct Observation of the Optical Plasma Resonance of Ag by Photon-Assisted TunnelingPhysical Review Letters, 1976
- Mechanism of detection of radiation in a high-speed metal-metal oxide-metal junction in the visible region and at longer wavelengthsJournal of Applied Physics, 1976
- Photo-induced tunnel currents in Al--Au structuresPhysical Review B, 1975
- Effects of thermal excitation and quantum-mechanical transmission on photothreshold determination of Schottky barrier heightSolid-State Electronics, 1975
- Optical detection in thin-film metal-oxide-metal diodesApplied Physics Letters, 1974
- Hot-Electron Attenuation in ThinFilmsPhysical Review Letters, 1965
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931