Growth of oriented diamond on single crystal of silicon carbide (0001)
- 31 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (5) , 557-559
- https://doi.org/10.1063/1.111102
Abstract
Diamond was deposited on a (0001) plane of an α-silicon carbide single crystal by the microwave method. The substrate surface was cleaned by pretreatment with hydrogen gas at 1200 °C. Cubo-octahedral diamond crystals with (111)D∥(0001)SiC were obtained.Keywords
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