Measurement of the Static Debye-Waller Factor of Silicon Crystals by the Pendellösung Fringe Method
- 1 November 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (11R) , 1903-1906
- https://doi.org/10.1143/jjap.26.1903
Abstract
The static Debye-Waiter factor of Czochralski-grown silicon crystals heat-treated at a high temperature has been measured by X-ray section topography. The static Debye-Waiter factor was determined through the variations in the Pendellösung fringes in a topograph. The measured static Debye-Waiter factor was proportional to the square of the scattering vector used, as expected from the theory. From an analysis of the experimental results the average size of the micro-defects formed by the heat treatment could be estimated.Keywords
This publication has 7 references indexed in Scilit:
- The integrated intensities of the Laue-diffracted X-rays for monocrystals containing macroscopically homogeneously distributed defectsPhysica Status Solidi (a), 1985
- Dynamical effects of X-ray scattering in laue geometry for Si crystals with structure defectsPhysica Status Solidi (a), 1984
- Effect of dislocation density on integrated intensity of X-ray scattering by silicon crystals in Laue geometryActa Crystallographica Section A Foundations of Crystallography, 1983
- Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation CrystalsPhysica Status Solidi (a), 1982
- Statistical dynamical theory of crystal diffraction. II. Intensity distribution and integrated intensity in the Laue casesActa Crystallographica Section A, 1980
- Statistical dynamical theory of crystal diffraction. I. General formulationActa Crystallographica Section A, 1980
- Bestimmung der Röntgen-Debye-Temperatur aus dem Borrmann-Effekt in Germanium / Determination of the X-ray Debye Temperature in Germanium by Means of the Borrmann EffectZeitschrift für Naturforschung A, 1973